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| AO3434 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3434 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 4.2A RDS(ON) < 52m RDS(ON) < 75m (VGS = 10V) (VGS = 10V) (VGS = 4.5V) ESD Protected TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current Power Dissipation B Symbol 10 sec VDS VGS 4.2 ID IDM PD TJ, TSTG 3.3 Maximum Steady-State 30 20 3.5 2.8 30 1.0 0.64 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C 1.4 0.9 W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Symbol t 10s Steady-State Steady-State RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3434 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 16V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=4.2A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=4.2A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 30 43 58 59 8.5 0.77 1 1.8 269 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 65 41 1 5.7 VGS=10V, VDS=15V, ID=4.2A 3 1.37 0.65 2.6 VGS=10V, VDS=15V, RL=3.6, RGEN=3 IF=4.2A, dI/dt=100A/s 2 Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 1 5 10 1.32 1.8 52 74 75 A uA V A m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 340 1.5 7.2 nC nC nC nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 3.8 8 23 5.5 21 ns ns ns ns ns nC 5.5 15.2 3.7 15.5 7.1 Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F.The current rating is based on the t10s thermal resistance rating. Rev0: Mar. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 15 10 5 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 80 70 RDS(ON) (m) 60 50 40 30 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 102 90 78 66 ID=4.2A 1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 125C 25C Normalized On-Resistance VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V Id=3.5A VGS=10V Id=4.2A 0 0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics 8V 6V 4.5V ID(A) 4V 3.5V 15 12 9 6 125C 3 25C VDS=5V VGS=10V 125C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 54 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS25CUSES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, OR 1.0E-04 42 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 30 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) www.aosmd.com AO3434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=4.2A 500 400 Capacitance (pF) Ciss 300 200 Coss 100 0 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 100.0 10s 10.0 ID (Amps) RDS(ON) limited 100 1m 10ms TJ(Max)=150C TA=25C 0.1 DC 0.1s 10s 30 25 Power (W) 20 15 10 5 0 0.001 TJ(Max)=150C TA=25C 1.0 0.1 0.0 0.01 1 VDS (Volts) 10 100 0.01 0.1 1 10 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPD DOES NOT ASSUME ANY LIABILITY ARISIG 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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